SEMICONDUCTOR STORING DEVICE

PURPOSE:To hasten a charging speed without being affected by dispersion with individual and manufacturing error controlling the conduction of a first and a second loading means by a node potential changing based on one bias potential. CONSTITUTION:To the transistor TR84 of a load circuit LD3, a voltage lowering only by the threshold value voltage of the TR84 than a source voltage is supplied. Then, the potential when the initial charging TR84 is non-conductive is lowered only by the threshold value voltage than the potential when the TR31 of the load circuit LDI is non-conductive. Opposing to this, since the TRs31, 84 are controlled by the potential of a node NDA changing based on one bias potential, the TR84 is non-conductive faster only by the threshold value of the TR83. Then, the TR84 is turned on till the potential of the node NDA is approached to the non-conductive potential of the TR31. Thus, without being affected by the dispersion with the manufacturing error, the charging speed is hastened.