MAGNETIC ROTATION SENSOR

PURPOSE:To provide a rotating sensor satisfying the interchange-ability of output and miniaturization by providing two semiconductor magnetoresistance elements having the same magnetoresistance changing characteristic and temperature characteristic on a permanent magnet, electrically connecting one-side terminals of the elements to each other, and opposing on element to a rotating body to be detected. CONSTITUTION:In a rotating sensor, an InSb thin film 10 is formed on a base 9 consisting of glass, a Si wafer or the like, a number of short-circuit electrodes 11 are formed thereon, and two semiconductor thin film magnetoresistance elements 12, 13 of two-terminal structure are used. The elements 12, 13 are the same in element form, resistance value, magnetoresistance changing characteristic and temperature characteristic, and the element 12 is installed to one of opposite surfaces of a cubic permanent magnet 14 or the surface opposed to a rotating body gear 15, and the element 13 to the opposed surface thereto. Central terminals 16, 17 are connected to each other with a lead 18. Since the output can be provided according to the width between the root and crest of the gear 15 only when the crest of the gear 15 comes to the sensor, even if the width of the gear 15 is different from the sensor, it is possible to conform to various gears with the same sensor, and also it is conformable to signal processing.