ETCHING LIQUID AND PRODUCTION OF SUBSTRATE FOR LIQUID CRYSTAL DISPLAY ELEMENT BY USING THIS LIQUID

PURPOSE:To allow uniform etching and to decrease inter-electrode shorting by using the etching liquid contg. hydrogen iodide and ferric chloride as a solute in water. CONSTITUTION:An ITO(indium tin oxide) film 101 formed on a substrate 104 is etched by using the etching liquid 105 contg. the hydroge...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ENOMOTO TAKASHI, DANJIYOU KATSUSHI, SHIMAMUNE MASAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS LIME, MAGNESIA MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-LINEAR OPTICS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRINTED CIRCUITS REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SLAG TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF TREATMENT OF NATURAL STONE
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To allow uniform etching and to decrease inter-electrode shorting by using the etching liquid contg. hydrogen iodide and ferric chloride as a solute in water. CONSTITUTION:An ITO(indium tin oxide) film 101 formed on a substrate 104 is etched by using the etching liquid 105 contg. the hydrogen iodide and ferric chloride as the solute in water to form fine patterns of ITO electrodes. The volume of hydroiodic acid, designated as Va, and the volume of an aq. ferric chloride soln., designated as Vb, are specified preferably to 0.1