JPH0556664B

PURPOSE:To eliminate delay of the responding speed owing to over saturation without adding processes for a Schottky barrier diode, etc., by forming a junction type diode for feeding bias at the emitter of an inputting transistor. CONSTITUTION:A junction type diode D1 is provided which is connected t...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAO WAHEI, ONDA MASATO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To eliminate delay of the responding speed owing to over saturation without adding processes for a Schottky barrier diode, etc., by forming a junction type diode for feeding bias at the emitter of an inputting transistor. CONSTITUTION:A junction type diode D1 is provided which is connected to the emitter of an inputting transistor Tr1. Thus photo current ISC3 causing the transistor Tr1 to saturate can be increased. The increase of the photo current ISC3 eases variation of light quantity such as emitted electrons in the photo coupler and overcurrent due to unevenness of current transfer ratios of the package in order to prevent delay of the responding speed sufficiently.