SEMICONDUCTOR POSITION DETECTOR
PURPOSE:To enable the upgrading of a resolving power on the side of a near point of a semiconductor position sensitive device(PSD) by setting a specific resistance distribution of a resistance layer so that it increases in proportion to a distance from one end according to a fixed function. CONSTITU...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | PURPOSE:To enable the upgrading of a resolving power on the side of a near point of a semiconductor position sensitive device(PSD) by setting a specific resistance distribution of a resistance layer so that it increases in proportion to a distance from one end according to a fixed function. CONSTITUTION:When a light spot phi is impinged into a PSD element 3, an electric charge proportional to light energy is generated at an incident position and outputted from electrodes A and B passing through a surface resistance layer (P-layer) as photo-current. Here, the distribution of a specific resistance R of the P-layer is so set that it increases in proportion to a distance from one end to obtain a position signal proportional to the square of an inverse of the distance thereby enabling the upgrading of a resolving power on the side of a near point. |
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