SEMICONDUCTOR LAYER

PURPOSE:To increase accuracy in forming a channel width which lies between reverse conducting type semiconductor areas which are formed along the trench groove of a single conducting type semiconductor layer and to obtain a semiconductor with high reliability and efficiency which prevent breaking of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANAKA MITSUGI, WAKATABE MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!