SEMICONDUCTOR LAYER

PURPOSE:To increase accuracy in forming a channel width which lies between reverse conducting type semiconductor areas which are formed along the trench groove of a single conducting type semiconductor layer and to obtain a semiconductor with high reliability and efficiency which prevent breaking of a channel protruding part (also to enlarge an effective area within a chip and manufacture it with a lower cost). CONSTITUTION:A metal layer 9 which makes Schottky or ohmic contact with the upper surface of a protruding part and a deposit forming layer 8 consisting of a metal which prepares a reverse conducting type semiconductor between a reverse conducting type semiconductor or single conducting type semiconductor 2 by contacting with both the protruding part and the recessed part are provided. The deposit forming layer 8 forms a p-n junction with the substrate of the single conducting type semiconductor 2, and forms an ohmic contact between metal layers.