SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor device with excellent electric characteristics and high reliability by preventing a protruding part from broken due to stress, relating to a semiconductor layer in which the surface of a semiconductor substrate is formed into a projecting and recessed shape and, at...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANAKA MITSUGI, WAKATABE MASARU
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:PURPOSE:To obtain a semiconductor device with excellent electric characteristics and high reliability by preventing a protruding part from broken due to stress, relating to a semiconductor layer in which the surface of a semiconductor substrate is formed into a projecting and recessed shape and, at least, a protruding part is provided with an electrode metal. CONSTITUTION:Over at least a part of the interior including the surface opening part of a recessed part 6 and the upper surface of an electrode metal 4 on a protruding part 5, a solid material layer 8 such as an almost identical metal and an alloy or an insulating material, etc., is arranged and provided in a manner where the recessed sections are clogged and connected to each other.