METHOD FOR FORMATION OF PHOTORESIST

PURPOSE:To provide a forming method of a photoresist which enables good patterning of a metal thin film. CONSTITUTION:A metal thin film formed on a substrate is coated with a photoresist and then patterned. In this process, the metal thin film on the substrate is first heat treated and then coated w...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WATANABE HIROSHI, DANJIYOU KATSUSHI, MITSUI MUTSUO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To provide a forming method of a photoresist which enables good patterning of a metal thin film. CONSTITUTION:A metal thin film formed on a substrate is coated with a photoresist and then patterned. In this process, the metal thin film on the substrate is first heat treated and then coated with the photoresist. The metal thin film is preferably heat treated at >=200 deg.C.