VERTICAL TYPE INSULATED COLLECTOR P-N-P TRANSISTOR STRUCTURE

PURPOSE: To provide a high-performance longitudinal-type insulating collector PNP transistor structure. CONSTITUTION: This structure includes a P -region 45 for emitter, N-region 44 for base and P-well region 46 for collector, the P-well region 46 is surrounded with an N-type pocket composed of an N -embedded layer 48 and an N reach- through area 47 in contact with this layer 48, contact regions 46-1 and 47-1 in the P-well region 46 and the N reach-through region 47 are short-circuitted, and a common metal contact 59 is formed. A thickness W in the P-well region 46 is suppressed to a minimum, so as to allow the transistor operation of parasitic NPN transistor formed from the N region 44, P-well region 46 and N - embedded layer 48. PNPN thyristor structure is formed, so as to make this parasitic PNP transistor parallel with the PNP transistor and problems caused by increase in the collector resistance of P-well region are canceled.