JPH05343544

PURPOSE:To reduce the defect of the title semiconductor device due to discontinuity or the like of a wiring regarding a method wherein an insulating film is formed by an ECR-PCVD method to cover the wiring composed mainly of aluminum on a substrate. CONSTITUTION:The manufacture is constituted in the...

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Bibliographische Detailangaben
1. Verfasser:	NAKAHIRA JUNYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To reduce the defect of the title semiconductor device due to discontinuity or the like of a wiring regarding a method wherein an insulating film is formed by an ECR-PCVD method to cover the wiring composed mainly of aluminum on a substrate. CONSTITUTION:The manufacture is constituted in the following manner: by means of a plasma chemical vapor growth method using electron cyclotron resonance(ECR), an insulating film 24 is formed in such a way that it is covered with a wiring layer 23 composed mainly of aluminum on a substrate 20 held by a holding tool; and, after that, the substrate 20 held by the holding tool is heat-treated by a heating means.