JPH05342896

PURPOSE:To reduce lowering in yield caused by the shift of a mask for forming a DMOS, dust, etc. CONSTITUTION:Transistor group constituted only of the transistors (5) and 5(a) of EMOS out of transistor groups corresponding to data lines 8 and 9 is not connected to the data line 9. Thus, when the transistors of DMOS are formed by the shift of the mask, dust, etc., on transistor groups to be constituted only of the transistors 5 and 5(a) of EMOS, the data line 9 is not grounded. Therefore, always a normal operation is carried out and the lowering in yield is reduced.