JPH05341867

PURPOSE:To obtain an arbitrary reference voltage high precisely set by a simple circuit by adjusting the difference of the threshold voltage or the constant voltage of the first and third MOSFET according to the size rate of the first and second(third and forth) MOSFET. CONSTITUTION:A MOSFET Q1 and...

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1. Verfasser: KUBONO SHIYOUJI
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To obtain an arbitrary reference voltage high precisely set by a simple circuit by adjusting the difference of the threshold voltage or the constant voltage of the first and third MOSFET according to the size rate of the first and second(third and forth) MOSFET. CONSTITUTION:A MOSFET Q1 and a MOSFET Q3 are a current mirror configuration. Currents of the same value are running through MOSFET Q3 and Q4, or MOSFET Q1 and Q2. Then, the threshold value increased in a process of the MOSFET Q1, or the added voltage of the threshold voltage to the constant voltage of the MOSFET Q1 is supplied between the gate and source of the MOSFET Q3. The MOSFET Q2 and Q4 are the same conductive MOSFET, and allowed to have the same threshold currents. The size rate of the MOSFET Q1 and Q2 is set to be the same as the size rate of the MOSFET Q3 and Q4. The difference of the voltage between the gate and source of the MOSFET Q2 and Q4 is used as the reference voltage. Thus, the arbitrary reference voltage can be obtained.