SEMICONDUCTOR INTEGRATED CIRCUIT

SEMICONDUCTOR INTEGRATED CIRCUIT

PURPOSE:To stabilize substrate potential of a semiconductor integrated circuit having an MOSFET and to stabilize operation of the MOSFET. CONSTITUTION:N-channel and P-channel MOSFET are formed on an upper surface of a P-type silicon substrate 1 provided with a P-type diffusion layer 3 whose conducti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: MUTOU MASAHITO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To stabilize substrate potential of a semiconductor integrated circuit having an MOSFET and to stabilize operation of the MOSFET. CONSTITUTION:N-channel and P-channel MOSFET are formed on an upper surface of a P-type silicon substrate 1 provided with a P-type diffusion layer 3 whose conductivity is improved by introducing P-type impurities to a lower side, and voltage change due to movement of carrier is restrained by the P-type diffusion layer 3; thereby, substrate potential is stabilized.