CONTROL OF OXIDIZING AND DIFFUSING TREATMENT CONDITION UNDER ATMOSPHERIC PRESSURE

PURPOSE:To eliminate change of thickness of oxidized film and to improve yield of product by altering a treating condition depending upon change of atmospheric pressure. CONSTITUTION:In an oxidizing and diffusing process of semiconductor production, in a high-temperature treating chamber, an oxidize...

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Hauptverfasser:	WATABE HIROSHI, KAJIYAMA TAKAO, YUZAWA YOSHIKI, MIYAJIMA SABURO, AOYANAGI TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To eliminate change of thickness of oxidized film and to improve yield of product by altering a treating condition depending upon change of atmospheric pressure. CONSTITUTION:In an oxidizing and diffusing process of semiconductor production, in a high-temperature treating chamber, an oxidized film is formed on a silicon wafer by an oxygen gas or steam. The thickness of the oxidized film is found to vary with change of atmospheric pressure when oxidation time and gas flow rate are constant. Atmospheric pressure during the treatment measured by a barometer 1 is converted into amounts changed of the oxidation time and the gas flow rate by correlation between atmospheric pressure and film thickness by an electronic computer 2 and the treating condition is regulated by a control device 1.