PRODUCTION OF SILICON NEEDLELIKE CRYSTAL

PURPOSE:To form a single needlelike crystal by forming a metallic layer having a lower melting point than that of a metallic layer forming an alloy with an Si single crystal or the Si single crystal on a substrate and then heating the metallic layer in a mixed gas containing SiCl4 and H2 at a specific molar ratio of the SiCl4/H2. CONSTITUTION:A thin film of Au forming an alloy with Si is formed on an Si single crystal substrate by vacuum deposition and electroplating and then processed into a dotted form 2 by a photolithographic method and etching. The Si single crystal substrate is subsequently arranged on the downstream side at >=1/2 of the total length of an Si depositing region in a reactional tube installed in a heating furnace. A mixed gas of SiCl4 with H2 is kept so as to provide >=0.04 molar ratio of the SiCl4/H2 and heated to grow a needlelike crystal. The ratio of the SiCl4/H2 is then regulated to