JPH05291536
PURPOSE:To improve an yield by implanting more impurities into one side electrode than the other electrode after a process of forming electrodes. CONSTITUTION:N-type impurities 36 are introduced into an electrode part 34A of a high-resistance load element R1, a power supply wiring 34B, a lead electr...
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Zusammenfassung: | PURPOSE:To improve an yield by implanting more impurities into one side electrode than the other electrode after a process of forming electrodes. CONSTITUTION:N-type impurities 36 are introduced into an electrode part 34A of a high-resistance load element R1, a power supply wiring 34B, a lead electrode 34 to be connected to a drain region of a MISFETQ t1 for transfer and a lead electrode 34 to be connected to an emitter region respectively. At this time, n-type impurities 36 are introduced to an extent allowing to secure the continuity of the electrode part 34A and a gate electrode 21 of a MISFETQ d2 for driving. On the other hand, an introduction quantity of n-type impurities 36 is not sufficient for forming an emitter region by drive-in diffusion. Now, n-type impurities are again introduced to enable the n-type impurities of a quantity required for forming an emitter region in the electrode 34 for outgoing to be connected to the emitter region to be introduced by the drive-in diffusion. |
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