JPH05251743

PURPOSE:To reduce the contact resistance of the electrode, enhance the current confinement effect to increase the optical output in a dual-wavelength light emitting device, and to simplify the manufacturing process. CONSTITUTION:On an n-GaAs substrate 1, an n-Al0.03Ga0.97As lower light emitting layer 2, an n-(Al0.70Ga0.30)0.50In0.50P lower clad layer 3, a p-GaInP active layer 4, a p-(Al0.07Ga0.30)0.50In0.50P upper clad layer 5, an n-(Al0.70Ga0.30)0.50In0.50P current blocking layer 6 and a p-GaAs cap layer 7 are sequentially grown. Zn is diffused from the upper surface of the cap layer 7 to the lower light emitting layer 2 thereby to form a current passage region 9. When a current is made to flow from a p-side electrode 10 on the cap layer 7 into the current passage region 9, a light emission occurs in the visible region in an active layer light emitting portion 14 around the current passage region 9, and a light emission of the infrared region occurs in a lower light emitting portion 13 on the interface between the bottom of the current passage region 9 and the lower light emitting layer 2.