JPH05251291

JPH05251291

PURPOSE: To produce a stable shelf-life silicon wafer surface having an advanta geous oxidation characteristic by using haloalkyl silane having a chemical formula R x SiR y (OR )4-x-y and haloalkyl disilazane having a chemical formula (R x R 3-x Si)2 NH as an organic silicon reagent. CONSTITUTION: H...

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Hauptverfasser: RASUTSURO FUABURI, DEIITAA GUREEFU, PEETAA YOON, MANFUREETO GURUNDONAA, SUZANNE BAUAA BEIAA
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator RASUTSURO FUABURI
DEIITAA GUREEFU
PEETAA YOON
MANFUREETO GURUNDONAA
SUZANNE BAUAA BEIAA
description PURPOSE: To produce a stable shelf-life silicon wafer surface having an advanta geous oxidation characteristic by using haloalkyl silane having a chemical formula R x SiR y (OR )4-x-y and haloalkyl disilazane having a chemical formula (R x R 3-x Si)2 NH as an organic silicon reagent. CONSTITUTION: Hydrophilic processing using hydrogen peroxide/ammonia is substantially applied to a silicon wafer of which one side is polished in accordance with 'RCA cleaning'. Then the wafer is rinsed and dried and then the organic silicon reagent is applied to the dried wafer. In this case, haloalkyl silane having a chemical formula R x SiR y (OR )4-x-y and haloalkyl disilazane having a chemical formula (R x R 3-x Si)2 NH are used as organic silicon reagent (wherein R is haloalkyl radical, R is alkyl radical, x is an integer of 1 to 3, and y is 0 or 1). Consequently the treated wafer surface can be provided with excellent shelf-life stability.
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CONSTITUTION: Hydrophilic processing using hydrogen peroxide/ammonia is substantially applied to a silicon wafer of which one side is polished in accordance with 'RCA cleaning'. Then the wafer is rinsed and dried and then the organic silicon reagent is applied to the dried wafer. In this case, haloalkyl silane having a chemical formula R x SiR y (OR )4-x-y and haloalkyl disilazane having a chemical formula (R x R 3-x Si)2 NH are used as organic silicon reagent (wherein R is haloalkyl radical, R is alkyl radical, x is an integer of 1 to 3, and y is 0 or 1). 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CONSTITUTION: Hydrophilic processing using hydrogen peroxide/ammonia is substantially applied to a silicon wafer of which one side is polished in accordance with 'RCA cleaning'. Then the wafer is rinsed and dried and then the organic silicon reagent is applied to the dried wafer. In this case, haloalkyl silane having a chemical formula R x SiR y (OR )4-x-y and haloalkyl disilazane having a chemical formula (R x R 3-x Si)2 NH are used as organic silicon reagent (wherein R is haloalkyl radical, R is alkyl radical, x is an integer of 1 to 3, and y is 0 or 1). 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title JPH05251291
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