JPH05242794

PURPOSE: To provide an image display device in which resolution is excellent and an orbit of an electron beam can be changed by differenciating the size of an opening made in an electrostatic field lens from the size of an opening made at a gate when making a field emission device by using the elect...

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Hauptverfasser: NOOMAN DABURIYUU PAAKAA, ROBAATO SHII KEIN
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE: To provide an image display device in which resolution is excellent and an orbit of an electron beam can be changed by differenciating the size of an opening made in an electrostatic field lens from the size of an opening made at a gate when making a field emission device by using the electrostatic field lens. CONSTITUTION: A field emission device 30 consists of an electron emitter 33 to emit electrons, gate 31 with an opening for itself to be penetrated through, an anode 32 to collect an emitted electron passing through the opening and an electrostatic field lens which is placed between the gate 31 and the anode 32 and forms an opening to make an emitted electron pass through. Thus the field emission device with an integrated electrostatic field lens is obtained, however, it is made with a multi-layer construction comprised of a supporting base 101, plural insulation layers 102, 104, 113, plural conductive/half-conductive layers 103, 105 and an electron emitter 116, and an opening 112 is generated by patterning them selectively.