JPH05234903

PURPOSE:To make film quality in the film thickness direction uniform, by heating gas introduced in an equipment main body. CONSTITUTION:A gas heating means 13 is inserted in a gas piping of a first gas introducing system. Plasma forming gas like oxygen and nitrogen is sent into a plasma forming cham...

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Bibliographische Detailangaben
1. Verfasser:	NAGAO YASUAKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To make film quality in the film thickness direction uniform, by heating gas introduced in an equipment main body. CONSTITUTION:A gas heating means 13 is inserted in a gas piping of a first gas introducing system. Plasma forming gas like oxygen and nitrogen is sent into a plasma forming chamber 3 via the gas heating means 13, and ECR plasma is generated in the plasma forming chamber 3. The gas heating means 13 effectively heats the gas all over the flow path section by the following constitution; the flow path whose section is flat rectangular is formed by using a metal plate, and a heater for resistance heating is arranged along the outside surface of each of the facing long sides of the rectangle. Gas heating temperature is selected to be about 30 deg.C. Thereby a film wherein irregularity of film quality does not exist in the film thickness direction and film quality is excellent can be formed.