SEMICONDUCTOR DEVICE

PURPOSE:To decrease a leak current, and also to reduce the variation of the threshold voltage of a MOS by a method wherein the gate length of the gate electrode on the boundary region between an active region and an inactive region is formed longer than the gate length of the gate electrode length o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YASUI KIYOSHI, YASUOKA HIDEKI, NAGAI HIROAKI, KODA TOYOMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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