NAND-TYPE MASK ROM

NAND-TYPE MASK ROM

PURPOSE: To provide an NAND-type mask ROM capable of accurate readout, in the case that a string selection transistor and a cell transistor are in a submicron class. CONSTITUTION: Layout is performed in such a manner that the channel length of a string selection transistor of an enhanced type channe...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RI KAZUHIRO, SAI MASATATSU, RI KEIKON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:PURPOSE: To provide an NAND-type mask ROM capable of accurate readout, in the case that a string selection transistor and a cell transistor are in a submicron class. CONSTITUTION: Layout is performed in such a manner that the channel length of a string selection transistor of an enhanced type channel, defined by widths of string selection lines 42, 43 is made longer than the other transistors. The enhanced channel length is set to a degree that a punch through is not generated, when a drain voltage higher than or equal to Vcc is applied. Thereby a leakage current of a string which is not selected can be restrained, so that malfunctions of a storage device can be prevented.