FORMATION METHOD OF INTERLAYER INSULATING FILM OF SEMICONDUCTOR DEVICE

FORMATION METHOD OF INTERLAYER INSULATING FILM OF SEMICONDUCTOR DEVICE

PURPOSE: To provide a method of forming a layer-insulating film for semiconductor device at a low temp. with good flow by shutting off sulfuric acid boiling or reaction with the air atoms to reduce external shocks, thereby avoiding breaking of a high concn. BPSG. CONSTITUTION: This method comprises...

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Bibliographische Detailangaben
Hauptverfasser: KIN CHIYOUKEI, YASU YASUYUKI, KO MASAKI, TEI YUUJIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To provide a method of forming a layer-insulating film for semiconductor device at a low temp. with good flow by shutting off sulfuric acid boiling or reaction with the air atoms to reduce external shocks, thereby avoiding breaking of a high concn. BPSG. CONSTITUTION: This method comprises steps of depositing an insulation film contg. B and P at high concns. on a semiconductor substrate, treating the surface of the deposited film with a plasma 3, and reflowing it at a low temp.