RESONANCE TUNNEL TRANSISTOR AND APPLICATION DEVICE THEREOF

RESONANCE TUNNEL TRANSISTOR AND APPLICATION DEVICE THEREOF

PURPOSE:To make it possible to produce a resonance tunnel transistor with ease, simplify its structure and attain higher integration. CONSTITUTION:Integrated films or active layers 6 made of at least two types of organic thin films 4 and 5 are sandwiched between a source electrode 1 and a drain elec...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSUMURA AKIRA, HIZUKA YUJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To make it possible to produce a resonance tunnel transistor with ease, simplify its structure and attain higher integration. CONSTITUTION:Integrated films or active layers 6 made of at least two types of organic thin films 4 and 5 are sandwiched between a source electrode 1 and a drain electrode 2 and a gate electrode 3 is installed to the organic thin film 5 so that the conductivity of the laminated layer or the active layer 6 may be changed by the applied voltage of the gate electrode 3. It is, therefore, possible to produce resonance tunnel transistors with higher ease and simplify component structure and attain higher integration.