MEASURING METHOD FOR IMPURITY DISTRIBUTION OF SEMICONDUCTOR

PURPOSE:To locate an abnormality of an impurity distribution by measuring a tunnel current flowing when a voltage between a semiconductor and a needle is varied, and obtaining work function on a surface of an impurity diffused layer from the relationship thereby to detect its impurity concentration....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YAMAGUCHI HIROSHI, ITO FUMIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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