MEASURING METHOD FOR IMPURITY DISTRIBUTION OF SEMICONDUCTOR

PURPOSE:To locate an abnormality of an impurity distribution by measuring a tunnel current flowing when a voltage between a semiconductor and a needle is varied, and obtaining work function on a surface of an impurity diffused layer from the relationship thereby to detect its impurity concentration. CONSTITUTION:A conductive needle 804 is made close to impurity diffused layers 802, 803 of semiconductor 801, an AC voltage is applied between the semiconductor 801 and the needle 804, and a current flowing in this case is measured to measure a current capacity between the needle 804 and the layers 802, 803. A work function on the surfaces of the layers 802, 803 is obtained to detect the impurity concentrations of the layers 802, 803. Thus, an abnormality of the impurity distribution of the layers 802, 803 can be located.