SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To obtain a new structure for preventing an increase in a contact resistance. CONSTITUTION:An interlayer insulating film 6 is formed on a silicon substrate 2. A contact hole 7 is formed at the film 6. An aluminum wiring 8a containing 1% of silicon is formed on the film 6, and brought into oh...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: TAKAMATSU YASUHIKO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To obtain a new structure for preventing an increase in a contact resistance. CONSTITUTION:An interlayer insulating film 6 is formed on a silicon substrate 2. A contact hole 7 is formed at the film 6. An aluminum wiring 8a containing 1% of silicon is formed on the film 6, and brought into ohmic contact with the substrate 2 through the hole 7. Silicon grains 12 exist on the film 6, and excess silicon is separated out in the wiring 8a. Separation of the silicon in the hole is suppressed, and an increase in a contact resistance is suppressed.