SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To provide a semiconductor device having an excellent connection reliability and being capable of a highly densified three dimensional lamination, for which it is easy to form many numbers of through holes in a high precision, and avoid the generation of thermal distortion in the wafer, and also provide a method for manufacturing such a semiconductor device. CONSTITUTION:Conductive pins 6 are inserted into through holes 5 orthogonal to the main surface of a semiconductor substrate. On its upper surface, a circuit element 2 and wiring conductor 3 are formed. One end of each conductive pin 3 and the wiring conductor 3 are electrically connected. The conductive pins 6 inserted into the through holes 5 are fixed by an adhesive agent or by a low-melting point metal. In this way, it is easy to form the dimension and electric conductance of all the through holes evenly and in a high precision. Also, the connection between the conductive pins 6 and the wiring conductor 3 can be attained by filling a low-melting point metal in the through holes 5. Therefore, the wafer processing temperature can be significantly reduced as compared to the conventional one, thus making it possible to avoid the generation of the thermal distortion in the wafer.