BAND-GAP REFERENCE CIRCUIT DEVICE

BAND-GAP REFERENCE CIRCUIT DEVICE

PURPOSE: To provide a band gap reference circuit device which is constituted by using the CMOS technique without adding any bipolar process step. CONSTITUTION: The band gap reference circuit device includes a first bipolar transistor T1 having emitter resistors R1 and R2 and a second bipolar transis...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KURUTO HOFUMAN, RAINAA KURAUSU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CONTROLLING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Beschreibung
Zusammenfassung:PURPOSE: To provide a band gap reference circuit device which is constituted by using the CMOS technique without adding any bipolar process step. CONSTITUTION: The band gap reference circuit device includes a first bipolar transistor T1 having emitter resistors R1 and R2 and a second bipolar transistor T2, and generates a reference voltage unrelated to the temperature by means of an operational amplifier OP by forming a difference between the base-emitter voltages of the both transistors T1 and T2. The transistors T1 and T2 are provided as parasitic transistors and the amplifier OP is constituted by using the MOS technique.