MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent deterioration of coverage in a connection hole of a metallic wiring film and to flatten the surface of a layer insulating film by applying and burning an application insulating film after forming the layer insulating film on a semiconductor substrate and by etching the whole surface of the insulating film back. CONSTITUTION:This constitution includes a process of forming and reflowing a layer insulating film 6 on a semiconductor substrate 1, a process of applying and burning an application insulating film 9 all over the layer insulating film 6 and a process of etching back the application insulating film 9 until it is removed entirely. The application insulating film 9 is formed thick to cover the entire surface of the layer insulating film 6. That is, the application insulating film 9 is used in a manufacturing process for flattening the surface of the layer insulating film 6; however, it is removed entirely thereafter. Thereby, it is possible to improve the flatness of the surface of the layer insulating film 6 by preventing deterioration of coverage inside a connection hole of a metallic wiring film without producing constitution inside the connection hole in the post process.