MIS DIODE

PURPOSE:To offer an MIS diode, in which no electric fields are concentrated at a specific spot of a gate electrode while having small parasitic resistance. CONSTITUTION:An entitled MIS diode is a substrate electrode 7 for contact with a silicon substrate 1, a gate insulating layer 2, a field insulating layer 3 formed by a LOCOS method, a gate electrode 4, an impurity diffusion layer 5, an opening part 6 provided on the gate insulating layer 2 and a silicon substrate 1. Since a plane shape of the gate electrode 4 is made a shape having removed the corner parts of a rectangular shape, electric fields are not concentrated on a specific point of the gate electrode 4, further, a distance 'L' from the central part of the gate electrode 4 to the substrate electrode 7 (the impurity diffusion layer 5) is shortened, and parasitic resistance becomes small.