SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor device wherein the rectification junction of a one-conductivity-type semiconductor region and an opposite-conductivity- type semiconductor region which have been improved in a switching characteristic sharply is provided without deteriorating a forward-direction cha...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUGA TAKASHI, WAKATABE MASARU
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:PURPOSE:To obtain a semiconductor device wherein the rectification junction of a one-conductivity-type semiconductor region and an opposite-conductivity- type semiconductor region which have been improved in a switching characteristic sharply is provided without deteriorating a forward-direction characteristic and a reverse-direction characteristic. CONSTITUTION:Passages for a carrier charge which have been formed so as to be surrounded by or to sandwich opposite-conductivity-type regions 3 are formed; capture regions 4 for the carrier charge which are composed of a semiconductor or a metal are formed inside the passages in positions within the diffusion length of the carrier charge; the capture regions 4 are kept in a floating potential state.