SEMICONDUCTOR STORAGE DEVICE

PURPOSE:To implement the aging test of a BiCMOS static type RAM, etc., normally and elevate the reliability by preventing all the selections of word lines in the aging test mode of the BiCMOS static type RAM, etc. CONSTITUTION:When a BiCMOS static type RAM, etc., are set to aging test mode, and word lines W0-Wm are put in nonselective conditions, the output transistors T9 provided in unit word line driving circuits UWD0-UWDm are put in OFF conditions, and also the nonselection levels of the word lines W0-Wm are set on the basis of low potential side power voltage VEE through a transistor T11 which becomes a level setting means. As a result, the nonselection level of the word lines W0-Wm in the aging mode is changed following the operating power source of a memory cell, in short, low potential side power source voltage, whereby all the selections of the word lines W0-Wm in aging test mode are prevented.