FORMATION OF THIN FERROELECTRIC FILM FINE PATTERN

PURPOSE:To form a fine pattern of a thin ferroelectric film without using a resist by applying a colloid solution containing a metal alkoxide polymer to a substrate and applying an electromagnetic wave along a desired circuit pattern followed by dipping the substrate into the solution so as to form the desired circuit pattern for being sintered. CONSTITUTION:A colloid solution containing polyalkoxide containing a function radical having an unsaturated junction inside a molecule is used as a thin ferroelectric film fine pattern forming agent to apply this on a substrate 11. This is irradiated with the electromagnetic wave 15 or the like as a prescribed pattern so as to generate a cross-link between molecules. By removing a part having generated no cross-link, the cross-linked part 13P alone is made to remain and this cross-linked part is subjected to heat treatment. By simultaneously performing removal and crystallization of an organic function part by heat treatment, the thin ferroelectric film fine pattern 13Q is formed. Accordingly, the fine pattern 13Q of the thin ferroelectric film is thereby formed without performing etching using a resist.