MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To provide a wiring processing technique using a new etching gas in place of the fluorocarbon gas for the manufacturing process of semiconductor integrated circuit devices. CONSTITUTION:At the time of processing an MoSi2 (or WSi2) film 14 deposited on a semiconductor substrate 8 by dry etchi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TORII ZENZO, NOJIRI KAZUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To provide a wiring processing technique using a new etching gas in place of the fluorocarbon gas for the manufacturing process of semiconductor integrated circuit devices. CONSTITUTION:At the time of processing an MoSi2 (or WSi2) film 14 deposited on a semiconductor substrate 8 by dry etching after a resist 15 is formed on the film 14, a mixed gas of SF6 and BCl3 is used as an etching gas.