MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To eliminate contact failures, or the like, by preventing the SOG film form being uncovered from the side walls of the contact hole, in addition to the elimination of a total etching process of the SOG film and the removal of deteriorations of smoothness a in manufacturing method of a semiconductor device, using a SOG film, for a contact hole of a multilayer interconnection, or equivalents, needed to be improved in smoothness. CONSTITUTION:The manufacturing method for a semiconductor device comprises the steps of laminating on a semiconductor substrate 1, on which an electrode wiring film 2 is formed, in order from the substrate, the first dielectric film 3, a SOG film 4, the second dielectric film 5, and forming a contact hole 6, where the electrode wiring film 2 is exposed, by producing an opening through the second dielectric film 5, the SOG film 4, and the first dielectric film 3 above the electrode wiring film 2 first an anisotropic etching technique, then covering the surface of the SOG film 4, exposed from the side walls of the contact hole 6, with a deposited dielectric film 9 by sputtering the second dielectric film 5 on the semiconductor substrate 1 by argon ions 7.