MANUFACTURE OF SEMICONDUCTOR DEVICE
PURPOSE:To suppress the uneven reaction of the edge parts of ohmic electrodes and to contrive a miniaturization of a gate electrode by flattening by a method wherein the ohmic electrodes are buried to form in a semiconductor substrate and a flat film is formed thereon. CONSTITUTION:An ohmic electrod...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PURPOSE:To suppress the uneven reaction of the edge parts of ohmic electrodes and to contrive a miniaturization of a gate electrode by flattening by a method wherein the ohmic electrodes are buried to form in a semiconductor substrate and a flat film is formed thereon. CONSTITUTION:An ohmic electrode material 7 is buried in opening parts 6 for ohmic electrode formation use formed in an N-type GaAs layer 4 on a semiconductor substrate 1 and after a flat film 8 is formed by curing on the surface of the material 7, a heat treatment is performed to form ohmic electrodes 7a. |
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