FORMATION OF METALLIC NITRIDE FILM

PURPOSE:To provide the method capable of forming a metallic nitride film small in the amt. of residual halogen and excellent in film properties at a high film forming rate. CONSTITUTION:In the method for forming a metallic nitride film on the surface of a substrate 13 in a vacuum chamber 1 by a DC p...

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Bibliographische Detailangaben
Hauptverfasser:	OTSU HIDEHIKO, ISHII YOSHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To provide the method capable of forming a metallic nitride film small in the amt. of residual halogen and excellent in film properties at a high film forming rate. CONSTITUTION:In the method for forming a metallic nitride film on the surface of a substrate 13 in a vacuum chamber 1 by a DC plasma CVD method, film forming is executed in such a manner that, as gas stock, halogenated metallic gas, ammonia gas and hydrogen gas are used as well as DC vias voltage impressed on the above substrate 13 is regulated to -100 to -1200V, the temp. of the above substrate 13 to >=400 deg.C and the pressure in the above chamber 1 to 0.1 to 10Torr.