MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM
PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KANZAWA AKIRA |
| description | PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2H5; R2 is a group such as CH=CH2; R3 is a group such as phenyl; and M is a metal atom such as Pb, Zr, Ti, La, or Ba) is mixed with a sensitive compd., which responds to an electromagnetic wave or corpuscular ray to cause the cross-linking between the polymers (e.g. a compd. of formula II). |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH05132561A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH05132561A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH05132561A3</originalsourceid><addsrcrecordid>eNrjZHD3dQxxDfJ09FFw9HNR8HUN8fB3UXDzDwJhX08_dwU3Tz9XhQDHEKAqPwV_NwU316Agf1cfV-eQIE9nhRAPTz-gEh9fHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oS7xXgYWBqaGxkamboaEyMGgC3nyxz</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM</title><source>esp@cenet</source><creator>KANZAWA AKIRA</creator><creatorcontrib>KANZAWA AKIRA</creatorcontrib><description>PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2H5; R2 is a group such as CH=CH2; R3 is a group such as phenyl; and M is a metal atom such as Pb, Zr, Ti, La, or Ba) is mixed with a sensitive compd., which responds to an electromagnetic wave or corpuscular ray to cause the cross-linking between the polymers (e.g. a compd. of formula II).</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; CONDUCTORS ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INSULATORS ; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930528&DB=EPODOC&CC=JP&NR=H05132561A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930528&DB=EPODOC&CC=JP&NR=H05132561A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANZAWA AKIRA</creatorcontrib><title>MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM</title><description>PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2H5; R2 is a group such as CH=CH2; R3 is a group such as phenyl; and M is a metal atom such as Pb, Zr, Ti, La, or Ba) is mixed with a sensitive compd., which responds to an electromagnetic wave or corpuscular ray to cause the cross-linking between the polymers (e.g. a compd. of formula II).</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>CONDUCTORS</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INSULATORS</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD3dQxxDfJ09FFw9HNR8HUN8fB3UXDzDwJhX08_dwU3Tz9XhQDHEKAqPwV_NwU316Agf1cfV-eQIE9nhRAPTz-gEh9fHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oS7xXgYWBqaGxkamboaEyMGgC3nyxz</recordid><startdate>19930528</startdate><enddate>19930528</enddate><creator>KANZAWA AKIRA</creator><scope>EVB</scope></search><sort><creationdate>19930528</creationdate><title>MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM</title><author>KANZAWA AKIRA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH05132561A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>CONDUCTORS</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INSULATORS</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>KANZAWA AKIRA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANZAWA AKIRA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM</title><date>1993-05-28</date><risdate>1993</risdate><abstract>PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2H5; R2 is a group such as CH=CH2; R3 is a group such as phenyl; and M is a metal atom such as Pb, Zr, Ti, La, or Ba) is mixed with a sensitive compd., which responds to an electromagnetic wave or corpuscular ray to cause the cross-linking between the polymers (e.g. a compd. of formula II).</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPH05132561A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON CONDUCTORS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INSULATORS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T04%3A47%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KANZAWA%20AKIRA&rft.date=1993-05-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH05132561A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |