MATERIAL AND METHOD FOR FORMING FINE PATTERN OF FERROELECTRIC THIN FILM

PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2...

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1. Verfasser: KANZAWA AKIRA
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To prepare the subject material which enables a fine resistless patterning of a ferroelectric thin film by mixing a colloidal soln. contg. a specific polymer with a specific sensitive compd. CONSTITUTION:A colloidal soln. contg. a polymer of formula I (wherein R1 is a group such as CH3 or C2H5; R2 is a group such as CH=CH2; R3 is a group such as phenyl; and M is a metal atom such as Pb, Zr, Ti, La, or Ba) is mixed with a sensitive compd., which responds to an electromagnetic wave or corpuscular ray to cause the cross-linking between the polymers (e.g. a compd. of formula II).