SEMICONDUCTOR LASER
PURPOSE:To improve a laser structure, and obtain a longitudinal single mode, by setting a diffraction grating in a waveguide for resonance while a laser beam is provided to the other optical waveguide in a ROR-type semiconductor laser including two optical waveguides for coupling beams of propagatin...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PURPOSE:To improve a laser structure, and obtain a longitudinal single mode, by setting a diffraction grating in a waveguide for resonance while a laser beam is provided to the other optical waveguide in a ROR-type semiconductor laser including two optical waveguides for coupling beams of propagating light. CONSTITUTION:A diffraction grating 15 is set in an optical waveguide 13 for resonance. A cleavage, for example, is used for an end face of the optical waveguide 13, and a highly reflective coating film 17 is provided so that the light can be reflected in a wide band range. |
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