MANUFACTURE OF SEMICONDUCTOR DEVICES

PURPOSE:To form connection holes which produce no disconnection failure of a wiring layer nor reliability degradation in a formation processing of connection holes for wiring which connect device of integrated circuits having a large number of devices. CONSTITUTION:After the formation of diffusion layer 4 or a first wiring layer 7, an interlaminar insulation film is formed thicker than a specified film thickness, thereby forming a pattern of a photoresist 6 for a connection hole. Some portion of the film thickness is etched with an etching liquid or isotropically dry-etched so as to eliminate the photoresist. The remaining interlaminar insulation film is anisotropically dry-etched until the first wiring layer 7 appears on surface, thereby forming a connection hole in a smooth cross section shape having no offset between the upper portion whose opening area spreads over and the bottom. It is possible to prevent the generation of constriction when forming a second wiring layer and hence protect the wiring from disconnection and enhance the reliability of integrated circuit by adopting a formation method of the connection hole in the structure described above.