MANUFACTURE OF LAMINATED SUBSTRATE

MANUFACTURE OF LAMINATED SUBSTRATE

PURPOSE:To reduce metal contamination in a heat treatment of a laminated substrate of silicon substrates or the like. CONSTITUTION:Silicon substrates 1 and 2 are laminated and a gas containing hydrogen chloride (HCl) is used as an atmosphere for a heat treatment after lamination. By subjecting the s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IZAWA NOBUYUKI, SATO HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To reduce metal contamination in a heat treatment of a laminated substrate of silicon substrates or the like. CONSTITUTION:Silicon substrates 1 and 2 are laminated and a gas containing hydrogen chloride (HCl) is used as an atmosphere for a heat treatment after lamination. By subjecting the silicon substrates 1 and 2 to the heat treatment in the atmosphere containing this hydrogen chloride, metal impurities 4 in the substrates are combined with chlorine and halogenated and become easy to vaporize. Accordingly, contamination caused by the metal impurities 4 in the silicon substrates 1 and 2 is reduced.