INSPECTING APPARATUS FOR DEFECT OF WAFER

PURPOSE:To reliably inspect a defect on the surface of a wafer at high speeds by photographing the surface of the wafer by means of a plurality of line image sensor elements shifted one another while moving the wafer relatively to a plurality of line image sensors. CONSTITUTION:A plurality of CCD li...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: IDEKAWA HIROSHI, AMAI TSUTOMU, TSUCHIYA NORIHIKO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator IDEKAWA HIROSHI
AMAI TSUTOMU
TSUCHIYA NORIHIKO
description PURPOSE:To reliably inspect a defect on the surface of a wafer at high speeds by photographing the surface of the wafer by means of a plurality of line image sensor elements shifted one another while moving the wafer relatively to a plurality of line image sensors. CONSTITUTION:A plurality of CCD line image sensors 1-A, 1-B, 1-C constituting an image detecting mechanism to photograph the surface of a wafer have a plurality of sensor elements A-1-A-3, B-1-B-3, C-1-C-3 corresponding to pixels. The line image sensors 1-A-1-C are shifted one another by a distance obtained by dividing the size of one pixel by the number of the line image sensors. While the wafer is moved relatively to the line image sensors 1-A-1-C by a moving means, the wafer is photographed and, the obtained image data is analyzed by an image analyzing means thereby to detect a defect.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPH05113406A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPH05113406A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPH05113406A3</originalsourceid><addsrcrecordid>eNrjZNDw9AsOcHUO8fRzV3AMCHAMcgwJDVZw8w9ScHF1A4or-LsphDu6uQbxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAPA1NDQ2MTAzNHY2LUAAAC2CQa</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INSPECTING APPARATUS FOR DEFECT OF WAFER</title><source>esp@cenet</source><creator>IDEKAWA HIROSHI ; AMAI TSUTOMU ; TSUCHIYA NORIHIKO</creator><creatorcontrib>IDEKAWA HIROSHI ; AMAI TSUTOMU ; TSUCHIYA NORIHIKO</creatorcontrib><description>PURPOSE:To reliably inspect a defect on the surface of a wafer at high speeds by photographing the surface of the wafer by means of a plurality of line image sensor elements shifted one another while moving the wafer relatively to a plurality of line image sensors. CONSTITUTION:A plurality of CCD line image sensors 1-A, 1-B, 1-C constituting an image detecting mechanism to photograph the surface of a wafer have a plurality of sensor elements A-1-A-3, B-1-B-3, C-1-C-3 corresponding to pixels. The line image sensors 1-A-1-C are shifted one another by a distance obtained by dividing the size of one pixel by the number of the line image sensors. While the wafer is moved relatively to the line image sensors 1-A-1-C by a moving means, the wafer is photographed and, the obtained image data is analyzed by an image analyzing means thereby to detect a defect.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19930507&amp;DB=EPODOC&amp;CC=JP&amp;NR=H05113406A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19930507&amp;DB=EPODOC&amp;CC=JP&amp;NR=H05113406A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IDEKAWA HIROSHI</creatorcontrib><creatorcontrib>AMAI TSUTOMU</creatorcontrib><creatorcontrib>TSUCHIYA NORIHIKO</creatorcontrib><title>INSPECTING APPARATUS FOR DEFECT OF WAFER</title><description>PURPOSE:To reliably inspect a defect on the surface of a wafer at high speeds by photographing the surface of the wafer by means of a plurality of line image sensor elements shifted one another while moving the wafer relatively to a plurality of line image sensors. CONSTITUTION:A plurality of CCD line image sensors 1-A, 1-B, 1-C constituting an image detecting mechanism to photograph the surface of a wafer have a plurality of sensor elements A-1-A-3, B-1-B-3, C-1-C-3 corresponding to pixels. The line image sensors 1-A-1-C are shifted one another by a distance obtained by dividing the size of one pixel by the number of the line image sensors. While the wafer is moved relatively to the line image sensors 1-A-1-C by a moving means, the wafer is photographed and, the obtained image data is analyzed by an image analyzing means thereby to detect a defect.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDw9AsOcHUO8fRzV3AMCHAMcgwJDVZw8w9ScHF1A4or-LsphDu6uQbxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAPA1NDQ2MTAzNHY2LUAAAC2CQa</recordid><startdate>19930507</startdate><enddate>19930507</enddate><creator>IDEKAWA HIROSHI</creator><creator>AMAI TSUTOMU</creator><creator>TSUCHIYA NORIHIKO</creator><scope>EVB</scope></search><sort><creationdate>19930507</creationdate><title>INSPECTING APPARATUS FOR DEFECT OF WAFER</title><author>IDEKAWA HIROSHI ; AMAI TSUTOMU ; TSUCHIYA NORIHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH05113406A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>IDEKAWA HIROSHI</creatorcontrib><creatorcontrib>AMAI TSUTOMU</creatorcontrib><creatorcontrib>TSUCHIYA NORIHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IDEKAWA HIROSHI</au><au>AMAI TSUTOMU</au><au>TSUCHIYA NORIHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INSPECTING APPARATUS FOR DEFECT OF WAFER</title><date>1993-05-07</date><risdate>1993</risdate><abstract>PURPOSE:To reliably inspect a defect on the surface of a wafer at high speeds by photographing the surface of the wafer by means of a plurality of line image sensor elements shifted one another while moving the wafer relatively to a plurality of line image sensors. CONSTITUTION:A plurality of CCD line image sensors 1-A, 1-B, 1-C constituting an image detecting mechanism to photograph the surface of a wafer have a plurality of sensor elements A-1-A-3, B-1-B-3, C-1-C-3 corresponding to pixels. The line image sensors 1-A-1-C are shifted one another by a distance obtained by dividing the size of one pixel by the number of the line image sensors. While the wafer is moved relatively to the line image sensors 1-A-1-C by a moving means, the wafer is photographed and, the obtained image data is analyzed by an image analyzing means thereby to detect a defect.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPH05113406A
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title INSPECTING APPARATUS FOR DEFECT OF WAFER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T18%3A35%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IDEKAWA%20HIROSHI&rft.date=1993-05-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPH05113406A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true