ONE ELECTRON TUNNEL TRANSISTOR AND INTEGRATED CIRCUIT THEREOF

PURPOSE:To enable an element to be enhanced in reliability and simplified in a manufacturing process by a method wherein a P-N junction micro-capacitor which induces one inter-electron band tunnel phenomenon is made to serve as a basic component element. CONSTITUTION:A P-type semiconductor 1 where impurities are introduced so as to enable its Fermi level 10 to overlap a valence band 12 and an N-type semiconductor 2 where impurities are introduced so as to enable its Fermi level 10 to overlap a conduction band 11 at a designated operating temperature are joined together to form a P-N junction. The P-N junction is provided with a depletion layer 7 wide enough to enable electrons to tunnel from the valence band 12 of the P-type semiconductor 1 to the conduction band 11 of the N-type semiconductor 2 and vice versa at a designated operating temperature. Furthermore, the P-N junction is possessed of a junction area just enough to forbid electrons to tunnel from the valence band 12 of the P-type semiconductor 1 to the conduction band 11 of the N-type semiconductor 2 and vice versa by a Coulomb blockade at a designated operating temperature on a designated inter-microcapacitor voltage.