RECTIFYING SEMICONDUCTOR DEVICE

PURPOSE:To enable a semiconductor chip area to be saued by a method wherein a Schottky contact plane formed on one conductivity type semiconductor is decreased in electric field intensity, lessened in reverse leakage current up to a high reverse voltage region, and enhanced in forward current per chip area. CONSTITUTION:A second one conductivity semiconductor PEL region, which has nearly the same electron potential as the barrier height of a metal layer M which forms a Schottky contact with the upside and a part of the side face of a protrusion 1 formed by a trench groove 2 of a certain conductivity type semiconductor N, is formed, and an opposite conductivity type semiconductor region P which as a larger electron potential than the barrier height of the metal layer M is formed on the base and the residual side face of the trench groove 2.