RECTIFYING SEMICONDUCTOR DEVICE

PURPOSE:To provide a rectifying semiconductor device which is lessened in reverse leakage current up to a high reverse voltage region without being deteriorated in forward voltage drop characteristics. CONSTITUTION:A rectifying semiconductor device is composed of a one conductivity type semiconductor N, a metal layer M, and a second one conductivity type semiconductor layer PEL interposed between the semiconductor N and the metal layer M, where the second one conductivity type semiconductor PEL layer is made to retain nearly the same electron potential as a Schottky barrier height by the one conductivity type semiconductor N and the metal layer M to serve as a Potential Equalized Layer(PEL).