SI IMPREGNATED SIC PRODUCT COATED BY CVD AND PRODUCTION THEREOF

PURPOSE:To improve thermal shock resistance and bending strength by allowing gaseous halogen to flow on an Si impregnated SiC substrate, removing the impregnated Si from the surface of the substrate having a prescribed thickness and forming an SiC film by chemical vapor deposition (CVD) method. CONS...

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Bibliographische Detailangaben
Hauptverfasser:	NOZAWA TATSUO, TABEI TAKAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PURPOSE:To improve thermal shock resistance and bending strength by allowing gaseous halogen to flow on an Si impregnated SiC substrate, removing the impregnated Si from the surface of the substrate having a prescribed thickness and forming an SiC film by chemical vapor deposition (CVD) method. CONSTITUTION:Gaseous halogen or gaseous hydrogen halide is allowed to flow on an Si impregnated SiC substrate at >=800 deg.C or this substrate 1 is immersed in an aq. soln. of fluoronitric acid. By this treatment, the impregnated Si is removed from the surface region of the substrate 1 corresponding to 2-15% of the thickness of the substrate and an Si free layer 2 is formed. An SiC film 3 then formed on the layer 2 by CVD method.