JPH0465034B

PURPOSE:To produce an aluminum material having a highly crystalline modified aluminum nitride layer, by controlling the acceleration energy for the nitrogen ion implantation to the surface of the aluminum material within a specific range. CONSTITUTION:Nitrogen cation (N2) is implanted to the surface...

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Bibliographische Detailangaben
Hauptverfasser: IWAKI MASAYA, OOHIRA SHIGEO
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To produce an aluminum material having a highly crystalline modified aluminum nitride layer, by controlling the acceleration energy for the nitrogen ion implantation to the surface of the aluminum material within a specific range. CONSTITUTION:Nitrogen cation (N2) is implanted to the surface of an aluminum material by an ion-implantation apparatus at an acceleration energy of 10-300KeV, preferably 50-200KeV. An aluminum material having modified aluminum nitride layer with excellent crystallinity can be produced by this process. When an aluminum single crystal is used as the matrix, the modified aluminum nitride layer formed on the surface is also made to be single crystal to obtain a material having excellent thermal conductivity and acoustic propagation. The crystallinity can be improved further by slight thermal treatment at 200-300 deg.C.